 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| (R) BULD116D MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1") 1 3 2 APPLICATIONS: s COMPACT FLUORESCENT LAMPS UP TO 23 W AT 110 V A.C. MAINS s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS AT 110 V A.C. MAINS DESCRIPTION The device is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. IPAK TO-251 ("Suffix "-1") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 400 200 9 5 10 2 4 20 -65 to 150 150 Unit V V V A A A A W o o C C September 2003 1/6 BULD116D THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 6.25 100 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES V EBO Parameter Collector Cut-off Current (V BE = 0) Emitter-Base Voltage (I C = 0) Test Conditions V CE = 400 V V CE = 400 V I E = 10 mA I C = 100 mA L = 25 mH T j = 125 o C 9 200 Min. Typ. Max. 100 500 Unit A A V V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) I CEO V CE(sat) Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage V CE = 200 V IC IC IC IC = = = = 0.5 A 1A 3A 5A IB IB IB IB = = = = 50 mA 0.1 A 0.6 A 1A 250 0.25 0.4 0.7 1.2 1.1 1.5 10 8 0.2 0.2 1.4 0.5 0.10 1.5 20 A V V V V V V V BE(sat) h FE Base-Emitter Saturation Voltage DC Current Gain RESISTIVE LOAD Rise Time Fall Time Storage Time INDUCTIVE LOAD Storage Time Fall Time IC = 1 A IC = 5 A I C = 10 mA IC = 5 A V CC = 125 V I B1 = 0.4 A t p = 30 s IC = 2 A V BE = -5 V V clamp = 180 V I B = 0.1 A IB = 1 A V CE = 5 V V CE = 5 V IC = 2 A I B2 = -0.4 A (see figure 2) I B1 = 0.4 A L = 500 H (see figure 1) tr tf ts ts tf VF 0.4 s s s s s V Diode Forward Voltage I C = 2 A Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area Derating Curve 2/6 BULD116D DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Switching Time Resistive Load Switching Time Inductive Load 3/6 BULD116D Reverse Biased SOA Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 4/6 BULD116D TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 V1 0.45 0.48 6.00 6.40 4.40 15.90 9.00 0.80 0.80 10 o mm TYP. MAX. 2.40 1.10 1.30 0.90 5.40 0.85 0.30 0.95 0.60 0.60 6.20 6.60 4.60 16.30 9.40 1.20 1.00 0.018 0.019 0.237 0.252 0.173 0.626 0.354 0.031 MIN. 0.087 0.035 0.028 0.025 0.204 2.20 0.90 0.70 0.64 5.20 inch TYP. MAX. 0.094 0.043 0.051 0.035 0.213 0.033 0.012 0.037 0.024 0.024 0.244 0.260 0.181 0.642 0.370 0.047 0.031 10 o 0.039 P032N_E 5/6 BULD116D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6 |
Price & Availability of BULD116D
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |